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IRF7379TRPBF
RoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET N/P-CH 30V 8-SOIC
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Buying Options
Total Price: USD $0.3
Unit Price: USD $0.30495
≥1 USD $0.30495
≥200 USD $0.24985
≥500 USD $0.24225
≥1000 USD $0.23465
Inventory: 5201
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series HEXFET?
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Terminal Finish Matte Tin (Sn)
Max Power Dissipation 2.5W
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 5.8A
Base Part Number IRF7379PBF
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 45m Ω @ 5.8A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 520pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5.8A 4.3A
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Continuous Drain Current (ID) 5.8A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.045Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 46A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Dimensions
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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