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IRF200P222
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 200V 182A TO247AC
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Buying Options
Total Price: USD $4.44
Unit Price: USD $4.437602
≥1 USD $4.437602
≥10 USD $3.882245
≥25 USD $3.370214
≥100 USD $3.085315
Inventory: 2595
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 26 Weeks
Physical
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Transistor Element Material SILICON
Dimensions
Height 24.99mm
Compliance
RoHS Status ROHS3 Compliant
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2013
Series StrongIRFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 556W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 556W
Case Connection DRAIN
Turn On Delay Time 25 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.6m Ω @ 82A, 10V
Vgs(th) (Max) @ Id 4V @ 270μA
Input Capacitance (Ciss) (Max) @ Vds 9820pF @ 50V
Current - Continuous Drain (Id) @ 25°C 182A Tc
Gate Charge (Qg) (Max) @ Vgs 203nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 77 ns
Continuous Drain Current (ID) 182A
JEDEC-95 Code TO-247AC
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0066Ohm
Drain to Source Breakdown Voltage 200V
Pulsed Drain Current-Max (IDM) 728A
Max Junction Temperature (Tj) 175°C
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