Operating Temperature -55°C~175°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish MATTE TIN OVER NICKEL
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 250
Time@Peak Reflow Temperature-Max (s) 30
Power Dissipation-Max 517W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.9m Ω @ 103A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 10470pF @ 50V
Current - Continuous Drain (Id) @ 25°C 171A Tc
Gate Charge (Qg) (Max) @ Vgs 227nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 47 ns
Continuous Drain Current (ID) 171A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.0059Ohm
Drain to Source Breakdown Voltage 150V
Pulsed Drain Current-Max (IDM) 684A
Max Junction Temperature (Tj) 175°C