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SPP20N60C3XKSA1
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 20.7A TO-220
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Buying Options
Total Price: USD $1.88
Unit Price: USD $1.88005
≥1 USD $1.88005
≥10 USD $1.5428
≥100 USD $1.49435
≥500 USD $1.4459
≥1000 USD $1.39745
Inventory: 7991
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Physical
Contact Plating Tin
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package PG-TO220-3-1
Weight 45.359237g
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2005
Series CoolMOS?
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 650V
Technology MOSFET (Metal Oxide)
Current Rating 20.7A
Power Dissipation-Max 208W Tc
Element Configuration Single
Power Dissipation 208W
Turn On Delay Time 10 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 190mOhm @ 13.1A, 10V
Vgs(th) (Max) @ Id 3.9V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20.7A Tc
Gate Charge (Qg) (Max) @ Vgs 114nC @ 10V
Rise Time 5ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 4.5 ns
Turn-Off Delay Time 67 ns
Continuous Drain Current (ID) 20.7A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 600V
Dual Supply Voltage 650V
Input Capacitance 2.4nF
Drain to Source Resistance 190mOhm
Rds On Max 190 mΩ
Nominal Vgs 3 V
Dimensions
Height 9.25mm
Length 10mm
Width 4.4mm
Compliance
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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