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IPB036N12N3GATMA1
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 120V 180A 7-Pin(6+Tab) TO-263
PDF
Buying Options
Total Price: USD $14.77
Unit Price: USD $14.7668
≥1 USD $14.7668
≥10 USD $12.1163
≥100 USD $11.7382
≥500 USD $11.35915
≥1000 USD $10.9801
Inventory: 9486
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 13 Weeks
Dimensions
Height 4.5mm
Compliance
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series OptiMOS?
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G6
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 300W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
Turn On Delay Time 35 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.6m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 270μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 13800pF @ 60V
Current - Continuous Drain (Id) @ 25°C 180A Tc
Gate Charge (Qg) (Max) @ Vgs 211nC @ 10V
Rise Time 52 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 21 ns
Turn-Off Delay Time 76 ns
Continuous Drain Current (ID) 180A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 120V
Drain-source On Resistance-Max 0.0036Ohm
Drain to Source Breakdown Voltage 120V
Avalanche Energy Rating (Eas) 900 mJ
Max Junction Temperature (Tj) 175°C
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