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IRFP064NPBF
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
In a Tube of 25, N-Channel MOSFET, 110 A, 55 V, 3-Pin TO-247AC Infineon IRFP064NPBF
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Buying Options
Total Price: USD $1.07
Unit Price: USD $1.07445
≥1 USD $1.07445
≥10 USD $0.8816
≥25 USD $0.85405
≥100 USD $0.8265
≥400 USD $0.79895
≥800 USD $0.7163
Inventory: 32642
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Dimensions
Height 24.99mm
Length 15.875mm
Width 5.3mm
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 1997
Series HEXFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Resistance 8MOhm
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Subcategory FET General Purpose Power
Voltage - Rated DC 55V
Technology MOSFET (Metal Oxide)
Current Rating 110A
Lead Pitch 5.45mm
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 200W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 150W
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8m Ω @ 59A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 110A Tc
Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V
Rise Time 100 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 70 ns
Turn-Off Delay Time 43 ns
Continuous Drain Current (ID) 110A
Threshold Voltage 4V
JEDEC-95 Code TO-247AC
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 98A
Drain to Source Breakdown Voltage 55V
Dual Supply Voltage 55V
Avalanche Energy Rating (Eas) 480 mJ
Recovery Time 170 ns
Max Junction Temperature (Tj) 175°C
Nominal Vgs 4 V
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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SPP06N80C3XK
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