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DMG9926UDM-7

Diodes Incorporated
RoHS
RoHS RoHS compliant
Package SOT-23-6
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 20V 4.2A SOT-26
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Buying Options
Total Price: USD $0.19
Unit Price: USD $0.1881
≥1 USD $0.1881
≥500 USD $0.1539
≥1000 USD $0.14915
≥2000 USD $0.1444
≥5000 USD $0.13965
≥10000 USD $0.1254
Inventory: 3608
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 15 Weeks

Dimensions

Height 1.3mm
Length 3.1mm
Width 1.7mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Max Power Dissipation 980mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number DMG9926UDM
Pin Count 6
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 980mW
Turn On Delay Time 8.4 ns
FET Type 2 N-Channel (Dual) Common Drain
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 28m Ω @ 8.2A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 856pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 8.3nC @ 4.5V
Rise Time 8.2 ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 8.9 ns
Turn-Off Delay Time 40.4 ns
Continuous Drain Current (ID) 4.2A
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6
Number of Pins 6
Transistor Element Material SILICON

Alternative Model

BUK6208-40C,118

NXP USA Inc.

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