Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Max Power Dissipation 1.2W
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Reference Standard AEC-Q101
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 6.8 ns
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 20m Ω @ 7.4A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 501pF @ 15V
Current - Continuous Drain (Id) @ 25°C 6.5A 4.2A
Gate Charge (Qg) (Max) @ Vgs 9.8nC @ 10V
Drain to Source Voltage (Vdss) 30V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Turn-Off Delay Time 28.4 ns
Continuous Drain Current (ID) 4.2A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 5.3A
Drain to Source Breakdown Voltage -30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate