Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Other Transistors
Max Power Dissipation 960mW
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 3.2 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5 Ω @ 340mA, 10V
Vgs(th) (Max) @ Id 3.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 66pF @ 25V
Current - Continuous Drain (Id) @ 25°C 340mA
Gate Charge (Qg) (Max) @ Vgs 2.2nC @ 10V
Continuous Drain Current (ID) -340mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.34A
Drain to Source Breakdown Voltage -60V
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate
Min Breakdown Voltage 60V