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NDC7003P

ON Semiconductor
RoHS
RoHS RoHS compliant
Package SOT-23-6 Thin, TSOT-23-6
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description Trans MOSFET P-CH 60V 0.34A 6-Pin SuperSOT T/R
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Buying Options
Total Price: USD $20.14
Unit Price: USD $4.028
≥5 USD $4.028
≥50 USD $3.30505
≥150 USD $3.2015
≥500 USD $3.09795
≥3000 USD $2.99535
≥6000 USD $2.68565
Inventory: 29095
Minimum: 5
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Technical Details

Supply Chain

Factory Lead Time 23 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2002
Series PowerTrench?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 5Ohm
Subcategory Other Transistors
Voltage - Rated DC -50V
Max Power Dissipation 960mW
Terminal Form GULL WING
Current Rating -220mA
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 960mW
Turn On Delay Time 3.2 ns
Power - Max 700mW
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5 Ω @ 340mA, 10V
Vgs(th) (Max) @ Id 3.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 66pF @ 25V
Current - Continuous Drain (Id) @ 25°C 340mA
Gate Charge (Qg) (Max) @ Vgs 2.2nC @ 10V
Rise Time 10 ns
Fall Time (Typ) 10 ns
Turn-Off Delay Time 8 ns
Continuous Drain Current (ID) -340mA
Threshold Voltage -1V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.34A
Drain to Source Breakdown Voltage -60V
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate
Nominal Vgs -1.9 V
Min Breakdown Voltage 60V

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Dimensions

Height 1.1mm
Length 3mm
Width 1.7mm

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Weight 36mg
Transistor Element Material SILICON

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