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PMGD290XN,115
RoHS 
RoHS compliant
RoHS compliantPackage 6-TSSOP, SC-88, SOT-363
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
NEXPERIA - PMGD290XN,115 - MOSFET ARRAY, DUAL N CHANNEL, 20V, 860MA, 6-SOT-363
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Buying Options
Total Price: USD $0.47
Unit Price: USD $0.47025
≥1 USD $0.47025
≥10 USD $0.38665
≥100 USD $0.3743
≥500 USD $0.36195
≥1000 USD $0.35055
Inventory: 1961
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 4 Weeks
Physical
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Surface Mount YES
Number of Pins 6
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1997
Series TrenchMOS?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.75
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 6
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 410mW
Power - Max 410mW
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 350m Ω @ 200mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 34pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 0.72nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Continuous Drain Current (ID) 860mA
Drain-source On Resistance-Max 0.35Ohm
DS Breakdown Voltage-Min 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
NSBC113EDXV6T5
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