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NTZD5110NT1G
RoHS 
RoHS compliant
RoHS compliantPackage SOT-563, SOT-666
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2N-CH 60V 0.294A SOT563
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Buying Options
Total Price: USD $0.43
Unit Price: USD $0.43035
≥1 USD $0.43035
≥10 USD $0.35245
≥100 USD $0.342
≥500 USD $0.3306
≥1000 USD $0.32015
Inventory: 9158
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Physical
Contact Plating Tin
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Surface Mount YES
Number of Pins 6
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 1.6Ohm
Subcategory FET General Purpose Power
Max Power Dissipation 900mW
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number NTZD5110N
Pin Count 6
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 250mW
Turn On Delay Time 12 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.6 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 24.5pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 0.7nC @ 4.5V
Rise Time 7.3 ns
Drain to Source Voltage (Vdss) 60V
Fall Time (Typ) 7.3 ns
Turn-Off Delay Time 63.7 ns
Continuous Drain Current (ID) 294mA
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Dimensions
Height 600μm
Length 1.7mm
Width 1.3mm
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