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2N7002DW-TP
RoHS 
RoHS compliant
RoHS compliantPackage 6-TSSOP, SC-88, SOT-363
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2N-CH 60V 0.115A SOT-363
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Buying Options
Total Price: USD $1.15
Unit Price: USD $1.1514
≥1 USD $1.1514
≥10 USD $0.9443
≥100 USD $0.91485
≥500 USD $0.8854
≥1000 USD $0.85595
Inventory: 6799
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 6
JESD-30 Code R-PDSO-G6
Qualification Status Not Qualified
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power - Max 200mW
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 7.5 Ω @ 50mA, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V
Current - Continuous Drain (Id) @ 25°C 115mA
Drain to Source Voltage (Vdss) 60V
Drain Current-Max (Abs) (ID) 0.115A
Drain-source On Resistance-Max 13.5Ohm
DS Breakdown Voltage-Min 60V
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 0.2W
FET Feature Standard
Feedback Cap-Max (Crss) 5 pF
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
SIA920DJ-T1-GE3
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