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NX3020NAKV,115
RoHS 
RoHS compliant
RoHS compliantPackage SOT-563, SOT-666
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
NEXPERIA - NX3020NAKV,115 - Dual MOSFET, Dual N Channel, 200 mA, 30 V, 2.7 ohm, 10 V, 1.2 V
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Buying Options
Total Price: USD $0.13
Unit Price: USD $0.1349
≥1 USD $0.1349
≥10 USD $0.1102
≥100 USD $0.10735
≥500 USD $0.10355
≥1000 USD $0.1007
Inventory: 2351
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 4 Weeks
Physical
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Surface Mount YES
Number of Pins 6
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Terminal Finish Tin (Sn)
Max Power Dissipation 375mW
Terminal Form GULL WING
Pin Count 6
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 5 ns
Power - Max 375mW
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.5 Ω @ 100mA, 10V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 13pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 0.44nC @ 4.5V
Rise Time 5ns
Fall Time (Typ) 17 ns
Turn-Off Delay Time 34 ns
Continuous Drain Current (ID) 200mA
Gate to Source Voltage (Vgs) 1.2V
Max Dual Supply Voltage 30V
Drain to Source Breakdown Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
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