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SI7942DP-T1-E3
RoHS 
RoHS compliant
RoHS compliantPackage PowerPAK? SO-8 Dual
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
Dual N-Channel 100 V 0.049 Ohms Surface Mount Power Mosfet - PowerPAK SO-8
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Buying Options
Total Price: USD $24.88
Unit Price: USD $24.8843
≥1 USD $24.8843
≥10 USD $20.41835
≥100 USD $19.77995
≥500 USD $19.1425
≥1000 USD $18.5041
Inventory: 8497
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Dimensions
Height 1.04mm
Length 4.9mm
Width 5.89mm
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Termination SMD/SMT
ECCN Code EAR99
Resistance 49mOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Powers
Max Power Dissipation 1.4W
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number SI7942
Pin Count 8
JESD-30 Code R-XDSO-C6
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.4W
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 49m Ω @ 5.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 3.8A
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Rise Time 15 ns
Fall Time (Typ) 20 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 5.9A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Dual Supply Voltage 100V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 4 V
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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