Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 2.1W
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 4.6 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 55m Ω @ 3.5A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA (Min)
Input Capacitance (Ciss) (Max) @ Vds 1580pF @ 30V
Current - Continuous Drain (Id) @ 25°C 3.7A
Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V
Drain to Source Voltage (Vdss) 60V
Turn-Off Delay Time 55 ns
Continuous Drain Current (ID) -4.8A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 3.7A
Drain to Source Breakdown Voltage -60V
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate