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FDMS3620S

ON Semiconductor
RoHS
RoHS RoHS compliant
Package 8-PowerTDFN
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 25V Asymtrc Dual NCh MOSFET PowerTrench
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Buying Options
Total Price: USD $2.94
Unit Price: USD $2.940652
≥1 USD $2.940652
≥10 USD $2.774194
≥100 USD $2.617168
≥500 USD $2.469024
≥1000 USD $2.32927
Inventory: 4897
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 18 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Weight 90mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Max Power Dissipation 1W
Base Part Number FDMS3620S
JESD-30 Code R-PDSO-N6
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN SOURCE
FET Type 2 N-Channel (Dual) Asymmetrical
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.7m Ω @ 17.5A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1570pF @ 13V
Current - Continuous Drain (Id) @ 25°C 17.5A 38A
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Turn-Off Delay Time 41 ns
Continuous Drain Current (ID) 38A
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 17.5A
Drain-source On Resistance-Max 0.0047Ohm
Drain to Source Breakdown Voltage 25V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

Dimensions

Height 1.05mm
Length 5.1mm
Width 6.1mm

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

NTMFS4H013NFT1G

ON Semiconductor

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