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NTHC5513T1G
RoHS 
RoHS compliant
RoHS compliantPackage 8-SMD, Flat Lead
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET N/P-CH 20V 1206A
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Buying Options
Total Price: USD $1.07
Unit Price: USD $1.07445
≥1 USD $1.07445
≥10 USD $0.8816
≥100 USD $0.85405
≥500 USD $0.8265
≥1000 USD $0.79895
Inventory: 8958
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Physical
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Surface Mount YES
Number of Pins 8
Weight 4.535924g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 20V
Max Power Dissipation 1.1W
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Current Rating 3.1A
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number NTHC5513
Pin Count 8
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.1W
Turn On Delay Time 7 ns
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 80m Ω @ 2.9A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 180pF @ 10V
Current - Continuous Drain (Id) @ 25°C 2.9A 2.2A
Gate Charge (Qg) (Max) @ Vgs 4nC @ 4.5V
Rise Time 13 ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Turn-Off Delay Time 33 ns
Continuous Drain Current (ID) 3.9A
Threshold Voltage 600mV
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage -20V
Pulsed Drain Current-Max (IDM) 10A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 600 mV
Dimensions
Height 1.1mm
Length 3.1mm
Width 1.7mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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