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FDS89161
RoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2N-CH 100V 2.7A 8-SOIC
PDF
Buying Options
Total Price: USD $1.66
Unit Price: USD $1.65965
≥1 USD $1.65965
≥10 USD $1.36135
≥100 USD $1.31955
≥500 USD $1.2768
≥1000 USD $1.23405
Inventory: 5723
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 11 Weeks
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 187mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Max Power Dissipation 31W
Terminal Form GULL WING
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.1W
Turn On Delay Time 4.2 ns
Power - Max 1.6W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 105m Ω @ 2.7A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 210pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 4.1nC @ 10V
Rise Time 1.3 ns
Drain to Source Voltage (Vdss) 100V
Fall Time (Typ) 1.9 ns
Turn-Off Delay Time 7.3 ns
Continuous Drain Current (ID) 2.7A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.105Ohm
Drain to Source Breakdown Voltage 100V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Feedback Cap-Max (Crss) 5 pF
Dimensions
Height 1.5mm
Length 4mm
Width 5mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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