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ZXMN6A11DN8TA
RoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET Dl 60V N-Chnl UMOS
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Buying Options
Total Price: USD $0.69
Unit Price: USD $0.6916
≥1 USD $0.6916
≥10 USD $0.5681
≥100 USD $0.55005
≥500 USD $0.532
≥1000 USD $0.5149
Inventory: 5849
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 17 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 73.992255mg
Transistor Element Material SILICON
Dimensions
Height 1.5mm
Length 5mm
Width 4mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 120mOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Powers
Voltage - Rated DC 60V
Max Power Dissipation 2.1W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 2.7A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Number of Elements 2
Number of Channels 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.1W
Turn On Delay Time 1.95 ns
Power - Max 1.8W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 120m Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA (Min)
Input Capacitance (Ciss) (Max) @ Vds 330pF @ 40V
Current - Continuous Drain (Id) @ 25°C 2.5A
Gate Charge (Qg) (Max) @ Vgs 5.7nC @ 10V
Rise Time 3.5 ns
Fall Time (Typ) 4.6 ns
Turn-Off Delay Time 8.2 ns
Continuous Drain Current (ID) 3.2A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
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