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DMN4034SSD-13
RoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2N-CH 40V 4.8A 8SO
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Buying Options
Total Price: USD $1.66
Unit Price: USD $1.65965
≥1 USD $1.65965
≥10 USD $1.36135
≥100 USD $1.31955
≥500 USD $1.2768
≥1000 USD $1.23405
Inventory: 1802
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 17 Weeks
Dimensions
Height 1.5mm
Length 5mm
Width 4mm
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Max Power Dissipation 1.8W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number DMN4034SSD
Pin Count 8
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.14W
Turn On Delay Time 2.7 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 34m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 453pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Rise Time 2.7 ns
Drain to Source Voltage (Vdss) 40V
Fall Time (Typ) 6 ns
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 4.8A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 6.3A
Drain-source On Resistance-Max 0.034Ohm
DS Breakdown Voltage-Min 40V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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