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US6M2TR

ROHM Semiconductor
RoHS
RoHS RoHS compliant
Package 6-SMD, Flat Leads
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description MOSFET N/P-CH 30V/20V TUMT6
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Buying Options
Total Price: USD $0.24
Unit Price: USD $0.24415
≥1 USD $0.24415
≥10 USD $0.20045
≥100 USD $0.1938
≥500 USD $0.18715
≥1000 USD $0.18145
Inventory: 7922
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 16 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-SMD, Flat Leads
Number of Pins 6
Transistor Element Material SILICON

Technical

Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2001
JESD-609 Code e2
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Termination SMD/SMT
ECCN Code EAR99
Resistance 340MOhm
Terminal Finish TIN COPPER
Subcategory Other Transistors
Max Power Dissipation 1W
Peak Reflow Temperature (Cel) 260
Current Rating 1.5A
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number *M2
Pin Count 6
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1W
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 240m Ω @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 80pF @ 10V
Current - Continuous Drain (Id) @ 25°C 1.5A 1A
Gate Charge (Qg) (Max) @ Vgs 2.2nC @ 4.5V
Drain to Source Voltage (Vdss) 30V 20V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 1A
Threshold Voltage 1.5V
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage -20V
Dual Supply Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Nominal Vgs 1.5 V

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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