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IPG20N04S408ATMA1
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerVDFN
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET N-Channel 40V MOSFET
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Buying Options
Total Price: USD $2.77
Unit Price: USD $2.76545
≥1 USD $2.76545
≥10 USD $2.26955
≥100 USD $2.1983
≥500 USD $2.12705
≥1000 USD $2.05675
Inventory: 8779
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Technical
Operating Temperature -55°C~175°C TJ
Packaging Cut Tape (CT)
Published 2010
Series OptiMOS?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F8
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power - Max 65W
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 7.6m Ω @ 17A, 10V
Vgs(th) (Max) @ Id 4V @ 30μA
Input Capacitance (Ciss) (Max) @ Vds 2940pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20A
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Drain to Source Voltage (Vdss) 40V
Drain Current-Max (Abs) (ID) 20A
Drain-source On Resistance-Max 0.0076Ohm
Pulsed Drain Current-Max (IDM) 80A
DS Breakdown Voltage-Min 40V
Avalanche Energy Rating (Eas) 230 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Compliance
RoHS Status ROHS3 Compliant
Physical
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Surface Mount YES
Transistor Element Material SILICON
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