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DMN2014LHAB-7

Diodes Incorporated
RoHS
RoHS RoHS compliant
Package 6-UFDFN Exposed Pad
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 20V 9A 6-UDFN
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Buying Options
Total Price: USD $15.21
Unit Price: USD $15.2076
≥1 USD $15.2076
≥10 USD $12.47825
≥100 USD $12.0878
≥500 USD $11.6983
≥1000 USD $11.30785
Inventory: 5460
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-UFDFN Exposed Pad
Number of Pins 7

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
JESD-609 Code e4
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Max Power Dissipation 800mW
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Turn On Delay Time 6.9 ns
FET Type 2 N-Channel (Dual) Common Drain
Rds On (Max) @ Id, Vgs 13m Ω @ 4A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1550pF @ 10V
Current - Continuous Drain (Id) @ 25°C 9A
Gate Charge (Qg) (Max) @ Vgs 16nC @ 4.5V
Rise Time 15.5ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 40.9 ns
Continuous Drain Current (ID) 9.3A
Gate to Source Voltage (Vgs) 12V
FET Feature Logic Level Gate

Dimensions

Height 600μm
Length 3.05mm
Width 2.05mm

Compliance

RoHS Status ROHS3 Compliant

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