Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory FET General Purpose Power
Max Power Dissipation 300mW
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 300m Ω @ 700mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 113pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 1.4nC @ 4.5V
Continuous Drain Current (ID) 700mA
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 0.7A
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate