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FDMS7608S
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerWDFN
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
Dual N-Channel 30 V 10/6.3 mOhm Surface Mount PowerTrench? Mosfet - Power56
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Buying Options
Total Price: USD $0.69
Unit Price: USD $0.6916
≥1 USD $0.6916
≥10 USD $0.5681
≥100 USD $0.55005
≥500 USD $0.532
≥1000 USD $0.5149
Inventory: 3224
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series PowerTrench?
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 10MOhm
Terminal Finish Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Subcategory FET General Purpose Power
Max Power Dissipation 2.5W
JESD-30 Code R-PDSO-N6
Output Voltage 30V
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Output Current 22A
Case Connection DRAIN SOURCE
Turn On Delay Time 7 ns
Power - Max 1W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1510pF @ 15V
Current - Continuous Drain (Id) @ 25°C 12A 15A
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Rise Time 10 ns
Fall Time (Typ) 10 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 15A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 30A
Drain to Source Breakdown Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
Number of Drivers 2
FET Feature Logic Level Gate
Feedback Cap-Max (Crss) 65 pF
Dimensions
Height 725μm
Length 5mm
Width 6mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Number of Pins 8
Weight 226mg
Transistor Element Material SILICON
Alternative Model
SUM10250E-GE3
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