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ZXMN6A09DN8TA
RoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2N-CH 60V 4.3A 8-SOIC
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Buying Options
Total Price: USD $13.83
Unit Price: USD $13.82535
≥1 USD $13.82535
≥10 USD $11.34395
≥100 USD $10.9896
≥500 USD $10.6343
≥1000 USD $10.27995
Inventory: 4836
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 17 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 73.992255mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 40mOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Max Power Dissipation 2.1W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 4.4A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Number of Elements 2
Number of Channels 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.1W
Turn On Delay Time 4.9 ns
Power - Max 1.25W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 40m Ω @ 8.2A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1407pF @ 40V
Current - Continuous Drain (Id) @ 25°C 4.3A
Gate Charge (Qg) (Max) @ Vgs 24.2nC @ 5V
Rise Time 5 ns
Fall Time (Typ) 4.6 ns
Turn-Off Delay Time 25.3 ns
Continuous Drain Current (ID) 5.6A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 4.3A
Drain to Source Breakdown Voltage 60V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Dimensions
Height 1.5mm
Length 5mm
Width 4mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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