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FDMS3664S
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerTDFN
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET PowerStage Dual N-Ch PowerTrench MOSFET
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Buying Options
Total Price: USD $11.06
Unit Price: USD $11.0599
≥1 USD $11.0599
≥10 USD $9.07535
≥100 USD $8.7913
≥500 USD $8.5082
≥1000 USD $8.22415
Inventory: 1597
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 13 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Weight 171mg
Transistor Element Material SILICON
Dimensions
Height 1.1mm
Length 5mm
Width 5.9mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Max Power Dissipation 1W
Terminal Form FLAT
JESD-30 Code R-PDSO-F6
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN SOURCE
Turn On Delay Time 7.7 ns
FET Type 2 N-Channel (Dual) Asymmetrical
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8m Ω @ 13A, 10V
Vgs(th) (Max) @ Id 2.7V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1765pF @ 15V
Current - Continuous Drain (Id) @ 25°C 13A 25A
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 25A
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 13A
Drain to Source Breakdown Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Feedback Cap-Max (Crss) 70 pF
Alternative Model
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