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FDMC7200S
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerWDFN
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET
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Buying Options
Total Price: USD $0.42
Unit Price: USD $0.41515
≥1 USD $0.41515
≥10 USD $0.34105
≥100 USD $0.32965
≥500 USD $0.3192
≥1000 USD $0.30875
Inventory: 3208
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 23 Weeks
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Number of Pins 8
Weight 186mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench?
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Subcategory FET General Purpose Power
Max Power Dissipation 1W
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN SOURCE
Power - Max 700mW 1W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 22m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 660pF @ 15V
Current - Continuous Drain (Id) @ 25°C 7A 13A
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
Drain to Source Voltage (Vdss) 30V
Continuous Drain Current (ID) 13A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 7A
DS Breakdown Voltage-Min 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Feedback Cap-Max (Crss) 30 pF
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
STD12N65M2
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