Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Feature LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Max Power Dissipation 900mW
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 40m Ω @ 5.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 460pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 7nC @ 5V
Turn-Off Delay Time 17 ns
Continuous Drain Current (ID) 5.5A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 4.6A
Drain to Source Breakdown Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate