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SI4559ADY-T1-GE3
RoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET N/P-CH 60V 5.3A 8-SOIC
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Buying Options
Total Price: USD $1.21
Unit Price: USD $1.2084
≥1 USD $1.2084
≥10 USD $0.9918
≥100 USD $0.96045
≥500 USD $0.93005
≥1000 USD $0.8987
Inventory: 4261
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 58MOhm
Subcategory Other Transistors
Max Power Dissipation 3.4W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number SI4559
Pin Count 8
Number of Elements 2
Number of Channels 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 30 ns
Power - Max 3.1W 3.4W
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 58m Ω @ 4.3A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 665pF @ 15V
Current - Continuous Drain (Id) @ 25°C 5.3A 3.9A
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Rise Time 70 ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 30 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 4.5A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 4.3A
Drain to Source Breakdown Voltage 60V
Avalanche Energy Rating (Eas) 6.1 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Dimensions
Height 1.55mm
Length 5mm
Width 4mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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