Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish MATTE TIN
Max Power Dissipation 3.1W
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 20m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 580pF @ 20V
Current - Continuous Drain (Id) @ 25°C 9.2A
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Turn-Off Delay Time 16 ns
Continuous Drain Current (ID) 7.4A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate