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SI3900DV-T1-E3
RoHS 
RoHS compliant
RoHS compliantPackage SOT-23-6 Thin, TSOT-23-6
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 20V 2.4A
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Buying Options
Total Price: USD $18.79
Unit Price: USD $18.79385
≥1 USD $18.79385
≥10 USD $15.4204
≥100 USD $14.93875
≥500 USD $14.4571
≥1000 USD $13.97545
Inventory: 2063
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Dimensions
Height 1mm
Length 3.05mm
Width 1.65mm
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Series TrenchFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 125mOhm
Terminal Finish MATTE TIN
Max Power Dissipation 830mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number SI3900
Pin Count 6
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 830mW
Turn On Delay Time 10 ns
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 125m Ω @ 2.4A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 4nC @ 4.5V
Rise Time 30 ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 30 ns
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 2A
Threshold Voltage 600mV
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 2A
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 600 mV
Alternative Model
UNR511E00L
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