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FDS8958B
RoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
Trans MOSFET N/P-CH 30V 6.4A/4.5A 8-Pin SOIC N T/R
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Buying Options
Total Price: USD $1.12
Unit Price: USD $1.123879
≥1 USD $1.123879
≥10 USD $1.060265
≥100 USD $1.000252
≥500 USD $0.943632
≥1000 USD $0.890222
Inventory: 4600
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 18 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 187mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series PowerTrench?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 26MOhm
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 900mW
Terminal Position DUAL
Terminal Form GULL WING
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.6W
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 26m Ω @ 6.4A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 540pF @ 15V
Current - Continuous Drain (Id) @ 25°C 6.4A 4.5A
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Rise Time 6 ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 6 ns
Turn-Off Delay Time 17 ns
Continuous Drain Current (ID) 4.5A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 25V
Drain Current-Max (Abs) (ID) 6.4A
Drain to Source Breakdown Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Dimensions
Height 1.575mm
Length 4.9mm
Width 3.9mm
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