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FDG6332C
RoHS 
RoHS compliant
RoHS compliantPackage 6-TSSOP, SC-88, SOT-363
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
ON SEMICONDUCTOR - FDG6332C - Dual MOSFET, N and P Channel, 700 mA, 20 V, 0.18 ohm, 4.5 V, 1.1 V
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Buying Options
Total Price: USD $0.75
Unit Price: USD $0.7524
≥1 USD $0.7524
≥10 USD $0.6175
≥100 USD $0.59755
≥500 USD $0.57855
≥1000 USD $0.55955
Inventory: 6412
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series PowerTrench?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 300MOhm
Subcategory Other Transistors
Max Power Dissipation 300mW
Terminal Form GULL WING
Current Rating 700mA
Number of Elements 2
Voltage 20V
Element Configuration Dual
Current 7A
Operating Mode ENHANCEMENT MODE
Power Dissipation 300mW
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 300m Ω @ 700mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 113pF @ 10V
Current - Continuous Drain (Id) @ 25°C 700mA 600mA
Gate Charge (Qg) (Max) @ Vgs 1.5nC @ 4.5V
Rise Time 14 ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 14 ns
Turn-Off Delay Time 6 ns
Continuous Drain Current (ID) 700mA
Threshold Voltage 1.1V
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Dimensions
Height 1.1mm
Length 2mm
Width 1.25mm
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