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FDG6301N
RoHS 
RoHS compliant
RoHS compliantPackage 6-TSSOP, SC-88, SOT-363
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2N-CH 25V 0.22A SC70-6
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Buying Options
Total Price: USD $0.25
Unit Price: USD $0.248168
≥1 USD $0.248168
≥10 USD $0.234118
≥100 USD $0.220866
≥500 USD $0.20836
≥1000 USD $0.196572
Inventory: 3000
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Weight 28mg
Transistor Element Material SILICON
Dimensions
Height 1.1mm
Length 2mm
Width 1.25mm
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1999
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Termination SMD/SMT
ECCN Code EAR99
Resistance 4Ohm
Additional Feature LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Voltage - Rated DC 25V
Max Power Dissipation 300mW
Terminal Form GULL WING
Current Rating 220mA
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 300mW
Turn On Delay Time 5 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4 Ω @ 220mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 9.5pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 0.4nC @ 4.5V
Rise Time 4.5 ns
Fall Time (Typ) 4.5 ns
Turn-Off Delay Time 4 ns
Continuous Drain Current (ID) 220mA
Threshold Voltage 850mV
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 25V
Dual Supply Voltage 25V
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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