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FDMS3615S
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerTDFN
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET DUAL N-Channel PowerTrench MOSFET
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Buying Options
Total Price: USD $12.66
Unit Price: USD $12.6597
≥1 USD $12.6597
≥10 USD $10.3873
≥100 USD $10.0624
≥500 USD $9.73845
≥1000 USD $9.41355
Inventory: 9398
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 18 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Weight 90mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series PowerTrench?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Max Power Dissipation 1W
JESD-30 Code R-PDSO-N6
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 1W
Case Connection DRAIN SOURCE
FET Type 2 N-Channel (Dual) Asymmetrical
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.8m Ω @ 16A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1765pF @ 13V
Current - Continuous Drain (Id) @ 25°C 16A 18A
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Rise Time 3 ns
Fall Time (Typ) 2.2 ns
Turn-Off Delay Time 24 ns
Continuous Drain Current (ID) 18A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 16A
Drain to Source Breakdown Voltage 25V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Feedback Cap-Max (Crss) 115 pF
Dimensions
Height 1.05mm
Length 5.1mm
Width 6.1mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
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