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MPS8099G

ON Semiconductor
RoHS
/
Package TO-226-3, TO-92-3 (TO-226AA)
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description TRANS NPN 80V 0.5A TO-92
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Buying Options
Total Price: USD $0.27
Unit Price: USD $0.26885
≥1 USD $0.26885
≥10 USD $0.2204
≥100 USD $0.21375
≥500 USD $0.2071
≥1000 USD $0.20045
Inventory: 8166
Minimum: 1
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Technical Details

Supply Chain

Lifecycle Status LAST SHIPMENTS (Last Updated: 4 days ago)

Physical

Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Surface Mount NO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2006
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Other Transistors
Voltage - Rated DC 80V
Max Power Dissipation 625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating 500mA
Frequency 150MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MPS8099
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 625mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 150MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA 5V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage 80V
Transition Frequency 150MHz
Collector Emitter Saturation Voltage 400mV
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 6V
hFE Min 100

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status RoHS Compliant
Lead Free Lead Free

Dimensions

Height 5.334mm
Length 5.1816mm
Width 4.191mm

Alternative Model

FJV3102RMTF

ON Semiconductor

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