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MPSA14G
RoHS
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Package TO-226-3, TO-92-3 (TO-226AA)
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description
Bulk Through Hole NPN - Darlington Single Bipolar (BJT) Transistor 20000 @ 100mA 5V 500mA 625mW 125MHz
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Buying Options
Total Price: USD $0.09
Unit Price: USD $0.091754
≥1 USD $0.091754
≥500 USD $0.067465
≥1000 USD $0.056225
≥2000 USD $0.051587
≥5000 USD $0.048209
≥10000 USD $0.044849
≥15000 USD $0.043368
≥50000 USD $0.042647
Inventory: 7556
Minimum: 1
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Technical Details
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 day ago)
Physical
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Surface Mount NO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Dimensions
Height 5.334mm
Length 5.1816mm
Width 4.191mm
Technical
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2000
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Other Transistors
Voltage - Rated DC 30V
Max Power Dissipation 625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating 500mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MPSA14
Pin Count 3
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 625mW
Transistor Application AMPLIFIER
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 20000 @ 100mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.5V @ 100μA, 100mA
Collector Emitter Breakdown Voltage 30V
Transition Frequency 125MHz
Collector Emitter Saturation Voltage 1.5V
Frequency - Transition 125MHz
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 10V
Continuous Collector Current 500mA
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status RoHS Compliant
Lead Free Lead Free
Alternative Model
No data
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