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MMBTA70LT1G
RoHS
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Package TO-236-3, SC-59, SOT-23-3
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description
Tape & Reel (TR) Surface Mount PNP Single Bipolar (BJT) Transistor 40 @ 5mA 10V -100mA 225mW 125MHz
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Buying Options
Total Price: USD $0.64
Unit Price: USD $0.6441
≥1 USD $0.6441
≥10 USD $0.5282
≥100 USD $0.51205
≥500 USD $0.49495
≥1000 USD $0.4788
Inventory: 7468
Minimum: 1
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Technical Details
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 weeks ago)
Physical
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -40V
Max Power Dissipation 225mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -100mA
Frequency 125MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MMBTA70
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 300mW
Power - Max 225mW
Gain Bandwidth Product 125MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 5mA 10V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage 40V
Transition Frequency 125MHz
Collector Emitter Saturation Voltage -250mV
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) -4V
Emitter Base Voltage (VEBO) 4V
hFE Min 40
Continuous Collector Current -100mA
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Alternative Model
No data
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