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DMN26D0UFB4-7
RoHS 
RoHS compliant
RoHS compliantPackage 3-XFDFN
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 20V 230MA DFN
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Buying Options
Total Price: USD $1.19
Unit Price: USD $0.11875
≥10 USD $0.11875
≥100 USD $0.0969
≥300 USD $0.09405
Inventory: 540
Minimum: 10
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Technical Details
Supply Chain
Factory Lead Time 18 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-XFDFN
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Digi-Reel?
Published 2017
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 10Ohm
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature ESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 350mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 350mW
Case Connection DRAIN
Turn On Delay Time 3.8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3 Ω @ 100mA, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 14.1pF @ 15V
Current - Continuous Drain (Id) @ 25°C 230mA Ta
Rise Time 7.9 ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±10V
Fall Time (Typ) 15.2 ns
Turn-Off Delay Time 13.4 ns
Continuous Drain Current (ID) 240mA
Gate to Source Voltage (Vgs) 10V
Drain Current-Max (Abs) (ID) 0.24A
DS Breakdown Voltage-Min 20V
Dimensions
Height 350μm
Length 1.05mm
Width 650μm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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