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BSN20BKR
RoHS 
RoHS compliant
RoHS compliantPackage TO-236-3, SC-59, SOT-23-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
On a Reel of 3000, N-Channel MOSFET, 330 mA, 60 V, 3-Pin SOT-23 Nexperia BSN20BKR
PDF
Buying Options
Total Price: USD $0.5
Unit Price: USD $0.05035
≥10 USD $0.05035
≥100 USD $0.04085
≥300 USD $0.0399
≥3000 USD $0.03895
≥6000 USD $0.03705
≥9000 USD $0.03325
Inventory: 4860
Minimum: 10
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+
Technical Details
Supply Chain
Factory Lead Time 4 Weeks
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 310mW Ta
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 7.9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.8 Ω @ 200mA, 10V
Vgs(th) (Max) @ Id 1.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 20.2pF @ 30V
Current - Continuous Drain (Id) @ 25°C 265mA Ta
Gate Charge (Qg) (Max) @ Vgs 0.49nC @ 4.5V
Rise Time 8.4ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 5.1 ns
Turn-Off Delay Time 12.5 ns
Continuous Drain Current (ID) 265mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.265A
DS Breakdown Voltage-Min 60V
Feedback Cap-Max (Crss) 7 pF
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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