2SB1495,Q(J

Toshiba Semiconductor and Storage

RoHS

Package TO-220-3 Full Pack

Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single

Description Bulk Through Hole PNP Bipolar (BJT) Transistor 2000 @ 2A 2V 3A 2W 100V

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Buying Options

Total Price: USD $6.06

Unit Price: USD $6.06195

≥1 USD $6.06195

≥10 USD $4.9742

≥100 USD $4.8184

≥500 USD $4.6626

≥1000 USD $4.50775

Inventory: 939

Minimum: 1

Technical Details

Physical

Mounting Type Through Hole

Package / Case TO-220-3 Full Pack

Supplier Device Package TO-220NIS

Technical

Operating Temperature 150°C TJ

Packaging Bulk

Published 2007

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Power - Max 2W

Transistor Type PNP

DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 2A 2V

Current - Collector Cutoff (Max) 10μA ICBO

Vce Saturation (Max) @ Ib, Ic 1.5V @ 1.5mA, 1.5A

Voltage - Collector Emitter Breakdown (Max) 100V

Current - Collector (Ic) (Max) 3A

Alternative Model

No data

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