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2SA1837(F,M)

Toshiba Semiconductor and Storage
RoHS
/
Package TO-220-3 Full Pack
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description Trans GP BJT PNP 230V 1A 3-Pin(3+Tab) TO-220NIS
PDF
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Buying Options
Total Price: USD $1.1
Unit Price: USD $1.095912
≥1 USD $1.095912
≥10 USD $1.033886
≥100 USD $0.975363
≥500 USD $0.920153
≥1000 USD $0.86807
Inventory: 5997
Minimum: 1
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Technical Details

Physical

Contact Plating Copper, Silver, Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Supplier Device Package TO-220NIS

Technical

Operating Temperature 150°C TJ
Packaging Bulk
Published 2007
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC -230V
Max Power Dissipation 2W
Current Rating -1A
Frequency 70MHz
Base Part Number 2SA1837
Number of Elements 1
Polarity PNP
Element Configuration Single
Power Dissipation 2W
Power - Max 2W
Gain Bandwidth Product 70MHz
Transistor Type PNP
Collector Emitter Voltage (VCEO) 230V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 5V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 1.5V @ 50mA, 500mA
Collector Emitter Breakdown Voltage 230V
Voltage - Collector Emitter Breakdown (Max) 230V
Current - Collector (Ic) (Max) 1A
Max Frequency 70MHz
Frequency - Transition 70MHz
Collector Base Voltage (VCBO) 230V
Emitter Base Voltage (VEBO) 5V
hFE Min 100

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

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