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PN3567

ON Semiconductor
RoHS
/
Package TO-226-3, TO-92-3 (TO-226AA)
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description Bulk Through Hole NPN Single Bipolar (BJT) Transistor 40 @ 150mA 1V 600mA 625mW 80V
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Buying Options
Total Price: USD $1.21
Unit Price: USD $1.20555
≥1 USD $1.20555
≥10 USD $0.98895
≥100 USD $0.95855
≥500 USD $0.9272
≥1000 USD $0.8968
Inventory: 2695
Minimum: 1
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Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Supplier Device Package TO-92-3
Weight 201mg

Technical

Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2002
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 40V
Max Power Dissipation 625mW
Current Rating 150mA
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 625mW
Power - Max 625mW
Transistor Type NPN
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA 1V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 15mA, 150mA
Collector Emitter Breakdown Voltage 40V
Voltage - Collector Emitter Breakdown (Max) 40V
Current - Collector (Ic) (Max) 600mA
Collector Emitter Saturation Voltage 250mV
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
hFE Min 40

Compliance

RoHS Status RoHS Compliant
Lead Free Lead Free

Alternative Model

No data

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