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MJE3055T
RoHS
/
Package TO-220-3
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description
Tube Through Hole NPN Single Bipolar (BJT) Transistor 20 @ 4A 4V 10A 75W 2MHz
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Buying Options
Total Price: USD $0.81
Unit Price: USD $0.8056
≥1 USD $0.8056
≥10 USD $0.6612
≥50 USD $0.6403
≥100 USD $0.62035
≥500 USD $0.59945
≥1000 USD $0.5377
Inventory: 42
Minimum: 1
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Technical Details
Supply Chain
Lifecycle Status OBSOLETE (Last Updated: 2 days ago)
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Dimensions
Height 9.15mm
Length 10.28mm
Width 4.6mm
Compliance
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2010
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 60V
Max Power Dissipation 75W
Current Rating 10A
Base Part Number MJE3055
Polarity NPN
Element Configuration Single
Power Dissipation 75W
Power - Max 75W
Gain Bandwidth Product 2MHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 10A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 4A 4V
Current - Collector Cutoff (Max) 700μA
Vce Saturation (Max) @ Ib, Ic 8V @ 3.3A, 10A
Collector Emitter Breakdown Voltage 60V
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 10A
Max Frequency 2MHz
Collector Emitter Saturation Voltage 1.1V
Max Breakdown Voltage 80V
Frequency - Transition 2MHz
Collector Base Voltage (VCBO) 70V
Emitter Base Voltage (VEBO) 5V
hFE Min 20
Alternative Model
No data
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