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MJ11032

ON Semiconductor
RoHS
/
Package TO-204AE
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description TRANS NPN DARL 120V 50A TO3
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Buying Options
Total Price: USD $16.11
Unit Price: USD $16.10915
≥1 USD $16.10915
≥10 USD $13.2183
≥25 USD $12.80505
≥100 USD $12.3918
Inventory: 46
Minimum: 1
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Technical Details

Physical

Mounting Type Through Hole
Package / Case TO-204AE
Surface Mount NO
Number of Pins 2
Transistor Element Material SILICON

Compliance

REACH SVHC No SVHC
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

Technical

Operating Temperature -55°C~200°C TJ
Packaging Tray
Published 2008
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Other Transistors
Voltage - Rated DC 120V
Max Power Dissipation 300W
Terminal Position BOTTOM
Terminal Form PIN/PEG
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating 50A
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 2
Qualification Status Not Qualified
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 300W
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 3.5V
Max Collector Current 50A
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 25A 5V
Current - Collector Cutoff (Max) 2mA
Vce Saturation (Max) @ Ib, Ic 3.5V @ 500mA, 50A
Collector Emitter Breakdown Voltage 120V
Collector Base Voltage (VCBO) 120V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 50A

Alternative Model

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