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BD13910S

ON Semiconductor
RoHS
RoHS RoHS compliant
Package TO-225AA, TO-126-3
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description 1.5 A, 80 V NPN Bipolar Power Transistor
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Buying Options
Total Price: USD $14.59
Unit Price: USD $14.58725
≥1 USD $14.58725
≥10 USD $11.96905
≥100 USD $11.5957
≥500 USD $11.2214
≥1000 USD $10.8471
Inventory: 3664
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 6 days ago)

Physical

Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Number of Pins 3
Weight 761mg
Transistor Element Material SILICON

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature 150°C TJ
Packaging Bulk
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 80V
Max Power Dissipation 1.25W
Current Rating 1.5A
Base Part Number BD139
Number of Elements 1
Element Configuration Single
Power Dissipation 1.25W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 80V
Transition Frequency 250MHz
Collector Emitter Saturation Voltage 500mV
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
hFE Min 40

Alternative Model

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