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PBSS5130PAP,115
RoHS 
RoHS compliant
RoHS compliantPackage 6-UDFN Exposed Pad
Category Transistors - Bipolar (BJT) - Arrays / Transistors - Bipolar (BJT) - Arrays
Description
PBSS5130PAP - 30 V, 1 A PNP/PNP low VCEsat (BISS) transistor
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Buying Options
Total Price: USD $3.54
Unit Price: USD $3.5435
≥1 USD $3.5435
≥10 USD $2.90795
≥100 USD $2.81675
≥500 USD $2.7265
≥1000 USD $2.6353
Inventory: 3388
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 20 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-UDFN Exposed Pad
Number of Pins 6
Technical
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2012
JESD-609 Code e3
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Max Power Dissipation 1.45W
Base Part Number PBSS5130
Pin Count 6
Polarity PNP
Element Configuration Dual
Power - Max 510mW
Gain Bandwidth Product 125MHz
Transistor Type 2 PNP (Dual)
Collector Emitter Voltage (VCEO) -30V
Max Collector Current -2A
DC Current Gain (hFE) (Min) @ Ic, Vce 170 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 280mV @ 50mA, 1A
Voltage - Collector Emitter Breakdown (Max) 30V
Current - Collector (Ic) (Max) 1A
Collector Emitter Saturation Voltage -85mV
Collector Base Voltage (VCBO) -30V
Emitter Base Voltage (VEBO) -7V
hFE Min 250
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Alternative Model
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