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ULN2803AFWG,C,EL

Toshiba Semiconductor and Storage
RoHS
/
Package 18-SOIC (0.295, 7.50mm Width)
Category Transistors - Bipolar (BJT) - Arrays / Transistors - Bipolar (BJT) - Arrays
Description TRANS 8NPN DARL 50V 0.5A 18SOL
PDF
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Buying Options
Total Price: USD $2.15
Unit Price: USD $2.14795
≥1 USD $2.14795
≥10 USD $1.7632
≥100 USD $1.7081
≥500 USD $1.653
≥1000 USD $1.5979
Inventory: 6365
Minimum: 1
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Technical Details

Physical

Number of Pins 18
Transistor Element Material SILICON
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 18-SOIC (0.295, 7.50mm Width)

Technical

Operating Temperature -40°C~85°C TA
Packaging Cut Tape (CT)
Published 2012
JESD-609 Code e4
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 18
ECCN Code EAR99
Terminal Finish NICKEL PALLADIUM GOLD
Additional Feature LOGIC LEVEL COMPATIBLE
Max Power Dissipation 1.31W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number ULN280*A
Number of Elements 8
Configuration COMPLEX
Power - Max 1.31W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type 8 NPN Darlington
Collector Emitter Voltage (VCEO) 1.6V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 350mA 2V
Vce Saturation (Max) @ Ib, Ic 1.6V @ 500μA, 350mA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V

Compliance

RoHS Status RoHS Compliant

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