ULN2803APG,CN

Toshiba Semiconductor and Storage

RoHS

Package 18-DIP (0.300, 7.62mm)

Category Transistors - Bipolar (BJT) - Arrays / Transistors - Bipolar (BJT) - Arrays

Description TRANS 8NPN DARL 50V 0.5A 18DIP

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Buying Options

Total Price: USD $0.16

Unit Price: USD $0.156052

≥1 USD $0.156052

≥10 USD $0.147216

≥100 USD $0.138882

≥500 USD $0.131025

≥1000 USD $0.123609

Inventory: 8205

Minimum: 1

Technical Details

Physical

Mounting Type Through Hole

Package / Case 18-DIP (0.300, 7.62mm)

Technical

Operating Temperature -40°C~85°C TA

Packaging Tube

Published 2012

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Base Part Number ULN280*A

Power - Max 1.47W

Transistor Type 8 NPN Darlington

DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 350mA 2V

Vce Saturation (Max) @ Ib, Ic 1.6V @ 500μA, 350mA

Voltage - Collector Emitter Breakdown (Max) 50V

Current - Collector (Ic) (Max) 500mA

Alternative Model

PUMD13,135

Nexperia USA Inc.

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